| 摘要 |
<p>A memory device and manufacturing method thereof, and an access method. The memory device may comprise: a substrate (100); a back-gate (120) formed on the substrate (100); a transistor, including fins (104) formed at the two opposite sides of the back-gate (120) on the substrate (100) and a gate stack formed on the substrate (100), the gate stack intersecting the fin (104); and back-gate dielectric layers (116) between the back-gate (120) and each fin (104) and between the back-gate (120) and the substrate (100), there being openings arranged on the back-gate dielectric layer (116) at one side of the gate stack, the back-gate (120) being electrically connected to the fins through said openings.</p> |
