| 摘要 |
<p>The present invention relates to a method for manufacturing a colloidal quantum dot thin film and a method for manufacturing a quantum dot solar cell. Provided is a method for manufacturing a colloidal quantum dot thin which performs pressurizing surface treatment on a colloidal quantum dot thin by using gas under a high pressure of 2 atm or more to 70 atm or less. According to one embodiment of the present invention, the movement of carriers in the colloidal quantum dot thin film is improved and the efficiency of a solar cell is improved.</p> |
