SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor stacked body having low electric resistance in a thickness direction, a method for manufacturing the semiconductor stacked body, and a semiconductor element including the semiconductor stacked body.SOLUTION: A semiconductor stacked body 1 comprises: a GaOsubstrate 2 having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice; an AIN buffer layer 3 having predetermined thickness on the GaOsubstrate 2; and a nitride semiconductor layer 4 on the AIN buffer layer 3.