SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress variation in semiconductor characteristics of a semiconductor device using an oxide semiconductor by preventing impurities such as moisture and oxygen from being mixed into the oxide semiconductor, or to provide a semiconductor device excellent in reliability.SOLUTION: The semiconductor device comprises: a gate insulating film provided on a substrate having an insulating surface; a source electrode and a drain electrode which are provided on the gate insulating film; a first oxide semiconductor layer provided on the source electrode and the drain electrode; and a source region and a drain region which are provided between the first oxide semiconductor layer and both the source electrode and the drain electrode. A barrier film is provided in contact with the first oxide semiconductor layer.