发明名称 Die Seal Layout for VFTL Dual Damascene in a Semiconductor Device
摘要 A semiconductor may include several vias located in an active region and a die seal region. In the active region, a photoresist can be patterned with openings corresponding to the vias. In the die seal area however, the photoresist can be patterned to overlap the vias. With this configuration, an underlayer etch will not affect an underlayer resist in the die seal area allowing the die seal area to he disregarded for purposes of calculating a process window.
申请公布号 US2014312465(A1) 申请公布日期 2014.10.23
申请号 US201313865714 申请日期 2013.04.18
申请人 SPANSION LLC 发明人 WANG Fei
分类号 H01L29/40;H01L21/285;H01L21/76 主分类号 H01L29/40
代理机构 代理人
主权项 1. A semiconductor device, comprising: an active area having a plurality of active elements, each of the active elements being defined by a first trench overlapping with a first via, each of the active elements including a first continuous metal filling disposed in the trench and the via; and a die seal defined by a second trench, a second continuous metal filling disposed in the trench.
地址 Sunnyvale CA US