| 发明名称 |
DEFECTIVE P-N JUNCTION FOR BACKGATED FULLY DEPLETED SILICON ON INSULATOR MOSFET |
| 摘要 |
Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased. |
| 申请公布号 |
US2014312461(A1) |
申请公布日期 |
2014.10.23 |
| 申请号 |
US201313866077 |
申请日期 |
2013.04.19 |
| 申请人 |
Energies Alternatives Commissariat A L'Energie Atomique Et Aux;INTERNATIONAL BUSINESS MACHINES CORPORATION ;STMICROELECTRONICS, INC. |
发明人 |
Cheng Kangguo;Doris Bruce B.;Grenouillet Laurent;Khakifirooz Ali;Le Tiec Yannick;Liu Qing;Vinet Maud |
| 分类号 |
H01L21/761;H01L29/06 |
主分类号 |
H01L21/761 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for semiconductor fabrication, comprising:
forming a well in a semiconductor substrate; forming a pocket within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket; creating defects at the p-n junction such that a leakage resistance of the p-n junction is decreased. |
| 地址 |
US |
