| 摘要 |
<p>The present invention relates to a plasma process chamber with a real time process diagnosis device. An objective of the present invention is to facilitate a thickness measurement of a wafer even when an etching process is being performed on the wafer in the plasma process chamber. The plasma process chamber with a real time process diagnosis device according to the present invention comprises the following: a light output device which outputs light required to measure a wafer thickness; a reflector which reflects the light outputted from the light output device to guide the light into a wafer provided in the plasma process chamber and again reflect the incident light; a light measuring device which receives the light reflected by a focusing lens, takes a spectrum of the received light to measure a transmission ratio and an absorption ratio; and a controller which is configured with a thickness measuring algorithm to analyze the absorption ratio and transmission ratio data measured by the light measuring device and measure a thickness of the wafer in real time. Accordingly, a thickness measurement of a wafer is enabled even while an etching process is being performed on the wafer in the plasma process chamber, thereby facilitating an endpoint detection of the wafer. Also, a plasma state is monitored during the process, thereby fundamentally mitigating the causes of defective wafers.</p> |
