发明名称 CONTROL OVER HYDROGEN FLUORIDE LEVELS IN OXIDE ETCHANT
摘要 The invention is directed towards methods and compositions for identifying the amount of hydrofluoric acid in a buffered oxide etching composition. In buffered oxide etching compositions it is very difficult to measure the amount of hydrofluoric acid because it has varying equilibriums and it is toxic so it hard to handle and sample. When used to manufacture microchips however, incorrect amounts of hydrofluoric acid will ruin those chips. The invention utilizes a unique method of spectrographically measuring the hydrofluoric acid when in contact with added chromogenic agents to obtain exact measurements that are accurate, immediate, and safe.
申请公布号 US2014315320(A1) 申请公布日期 2014.10.23
申请号 US201414322009 申请日期 2014.07.02
申请人 Nalco Company 发明人 Tseng Amy M.;Jenkins Brian V.;Mack Robert M.
分类号 G01N31/22 主分类号 G01N31/22
代理机构 代理人
主权项 1. A method of detecting and measuring the presence of ammonium fluoride in a BOE composition, the method comprising the steps of: collecting a representative sample of a BOE composition, adding a chromogenic agent to the composition, performing a spectrometric measurement of the composition, comparing the spectrometric measurement to pre-determined values to identify the quantity of ammonium fluoride in the BOE composition.
地址 Naperville IL US