| 发明名称 |
Lithographic Apparatus and Method |
| 摘要 |
A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero. |
| 申请公布号 |
US2014313496(A1) |
申请公布日期 |
2014.10.23 |
| 申请号 |
US201214351012 |
申请日期 |
2012.09.21 |
| 申请人 |
ASML Netherlands B.V. |
发明人 |
Gijsbertsen Arjan;Geraets Hubertus Antonius;Segers Bart Peter Bert;Davydova Natalia Victorovna |
| 分类号 |
G03F7/20;G01T1/02 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A lithographic apparatus comprising:
a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a pattern in its cross-section to form a patterned EUV radiation beam; and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero. |
| 地址 |
Veldhoven NL |
