| 摘要 |
<p>There is provided a back electrode type solar cell (1, 14) including: a silicon substrate (4) of a first conductivity type; an electrode for the first conductivity type (2) and an electrode for a second conductivity type (3) provided at a back surface opposite to a light-receiving surface of the silicon substrate (4); and a first conductivity type impurity diffusion layer (9) and a second conductivity type impurity diffusion layer (10) provided at the back surface of the silicon substrate (4), the first conductivity type impurity diffusion layer (9) and the second conductivity type impurity diffusion layer (10) being adjacently provided, the first conductivity type impurity diffusion layer (9) being provided at a peripheral edge of the back surface of the silicon substrate (4), and a method for producing the back electrode type solar cell.</p> |
