发明名称 |
DISPLAY DEVICE AND ELECTRONIC DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a structure for a semiconductor device for achieving low power consumption and improvement in yield and reliability even when a screen is enlarged, and to provide a method of producing the same.SOLUTION: A pixel thin-film transistor used in a screen is produced by using a reverse-stagger type thin-film transistor. In the reverse-stagger type thin-film transistor, a source wire and a gate electrode are produced on the same plane. In addition, metal wires connecting between the source wire and the reverse-stagger type thin-film transistor, and between the pixel electrode and the reverse-stagger type thin-film transistor are produced at the same step.</p> |
申请公布号 |
JP2014199928(A) |
申请公布日期 |
2014.10.23 |
申请号 |
JP20140094925 |
申请日期 |
2014.05.02 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
FUJIKAWA SAISHI;KUWABARA HIDEAKI |
分类号 |
H01L29/786;G02F1/1368;H01L21/3205;H01L21/768;H01L23/532 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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