发明名称 DISPLAY DEVICE AND ELECTRONIC DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a structure for a semiconductor device for achieving low power consumption and improvement in yield and reliability even when a screen is enlarged, and to provide a method of producing the same.SOLUTION: A pixel thin-film transistor used in a screen is produced by using a reverse-stagger type thin-film transistor. In the reverse-stagger type thin-film transistor, a source wire and a gate electrode are produced on the same plane. In addition, metal wires connecting between the source wire and the reverse-stagger type thin-film transistor, and between the pixel electrode and the reverse-stagger type thin-film transistor are produced at the same step.</p>
申请公布号 JP2014199928(A) 申请公布日期 2014.10.23
申请号 JP20140094925 申请日期 2014.05.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJIKAWA SAISHI;KUWABARA HIDEAKI
分类号 H01L29/786;G02F1/1368;H01L21/3205;H01L21/768;H01L23/532 主分类号 H01L29/786
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