SILICON PHOTOMULTIPLIER WITH VERY LOW OPTICAL CROSS-TALK AND IMPROVED READOUT

摘要

The silicon-based photomultiplier device comprises a substrate (1), a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer, wherein the first layer (2) and the second layer (3) form a p-n junction, wherein the first layer (2) and the second layer (3) are disposed on or above the substrate (1). A material layer (15) between the substrate (1) and the first layer (2) fulfils the function of a light absorber, thereby efficiently suppressing crosstalk between adjacent cells of the device. Material layer (15) may further serve as an electrode for readout of electrical signals from the device.