发明名称 |
GAS BARRIER LAYER WITH OXIDE SEMICONDUCTOR THIN FILMS AND FABRICATION METHOD THEREOF |
摘要 |
<p>The present invention relates to a gas barrier layer including an oxide semiconductor thin film. The gas barrier layer is properly used as a sealing material capable of reducing the permeation of gas like oxygen and water, being stably bent, being transparent, preventing the function degradation of electrical and electronic devices, and improving stability.</p> |
申请公布号 |
KR20140123610(A) |
申请公布日期 |
2014.10.23 |
申请号 |
KR20130038590 |
申请日期 |
2013.04.09 |
申请人 |
KANEKA CORPORATION;RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
LEE, JUN YOUNG;BOO YONG SOON;FUJIHARA KAN;KIM, SUNG HEE;JEON, SO YUN |
分类号 |
H01L51/52;H01L51/56;H05B33/22 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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