INTERFACE BETWEEN A I/III/VI2 LAYER AND A BACK CONTACT LAYER IN A PHOTOVOLTAIC CELL

摘要

The invention relates to a method of manufacturing a I-III-VI2 layer with photovoltaic properties, comprising:
deposition of a metal on a substrate to form a contact layer,deposition of a precursor of the photovoltaic layer, on the contact layer, andheat treatment of the precursor with an addition of element VI to form the layer.;The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer. In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.

主权项

1. Method for fabricating a I-III-VI2 layer having photovoltaic properties, comprising:
deposition of a metal on a substrate to form a contact layer, deposition of a precursor of the photovoltaic layer, on the contact layer, and heat treatment of the precursor with an addition of element VI to form the I-III-VI2 layer, the element VI diffusing into the contact layer during the heat treatment and combining with the metal to form a superficial layer (SUP) on the contact layer, said method being characterized by the metal deposition comprising a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI.