Resistive Random Access Memory Cells Having METAL ALLOY Current Limiting layers

摘要

Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from alloys of transition metals. Some examples of such alloys include chromium containing alloys that may also include nickel, aluminum, and/or silicon. Other examples include tantalum and/or titanium containing alloys that may also include a combination of silicon and carbon or a combination of aluminum and nitrogen. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature processing. In some embodiments, the breakdown voltage of a current limiting layer is at least about 8V. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layers while maintaining their performance.

主权项

1. A method for forming a resistive random access memory cell, the method comprising:
forming a resistive switching layer comprising a resistive switching material; forming a current limiting layer,
the current limiting layer comprising one of chromium, titanium, or tantalum,the current limiting layer having a breakdown voltage of at least 8V and a resistivity of at least 1 Ohm-cm in a direction normal to the current limiting layer; and forming an electrode layer.