Semiconductor Device and Method of Forming Bump Interconnect Structure with Conductive Layer Over Buffer Layer

摘要

A semiconductor device has a substrate with a plurality of contact pads. A first insulation layer is formed over the substrate and contact pads. A portion of the first insulating layer is removed to form a toroid-shaped SRO over the contact pads while retaining a central portion of the first insulating layer over the contact pads. The central portion of the first insulating layer can extend above a surface of the first insulating layer outside the first conductive layer. A first conductive layer is formed over the central portion of the first insulating layer and through the SRO in the first insulating layer over the contact pads. The first conductive layer may extend above a surface of the first insulating layer outside the second conductive layer. A semiconductor die is mounted to the substrate with the bumps electrically connected to the first conductive layer.

主权项

1. A method of making a semiconductor device, comprising:
providing a substrate including a contact pad formed on a surface of the substrate; forming a first insulating layer in direct contact with the surface of the substrate and contact pad; removing a first portion of the first insulating layer to form an opening within a boundary of the contact pad and extending to the contact pad while leaving a central portion of the first insulating layer extending from the contact pad, and removing a second portion of the first insulating layer to leave a surface of the first insulating layer extending outwardly from the opening below a height of the central portion of the first insulating layer; forming a protective mask in direct contact with the surface of the first insulating layer with an opening in the protective mask extending outside the opening in the first insulating layer; conformally applying a first conductive layer within the opening in the protective mask and in direct contact with the surface and central portion of the first insulating layer and through the opening in the first insulating layer in direct contact with the contact pad; providing a semiconductor die including a bump formed over the semiconductor die; and bonding the bump to the first conductive layer with the central portion of the first insulating layer extending into the bump.