| 发明名称 |
SEAL RING STRUCTURE WITH CAPACITOR |
| 摘要 |
A semiconductor device includes a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region. An insulating layer is on the semiconductor substrate. A seal ring structure is embedded in the insulating layer corresponding to the seal ring region. And, a plurality of doping regions are located beneath the first seal ring structure. |
| 申请公布号 |
US2014312470(A1) |
申请公布日期 |
2014.10.23 |
| 申请号 |
US201414320725 |
申请日期 |
2014.07.01 |
| 申请人 |
MediaTek Inc. |
发明人 |
HUNG Cheng-Chou;LEE Tung-Hsing;HUANG Yu-Hua;YANG Ming-Tzong |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type having a chip region enclosed by a seal ring region; an insulating layer on the semiconductor substrate; a first seal ring structure embedded in the insulating layer corresponding to the seal ring region; and a plurality of doping regions located beneath the first seal ring structure. |
| 地址 |
Hsin-Chu TW |
