SEMICONDUCTOR DEVICE AND TERMINATION REGION STRUCTURE THEREOF

摘要

A termination region structure of a semiconductor device is provided, which includes: a semiconductor layer; a plurality of trenches, formed on a surface of the semiconductor layer; a connecting trench, formed on the surface of the semiconductor layer, for connecting two adjacent trenches in the plurality of trenches; a first insulating layer, formed on surfaces of the plurality of trenches, the connecting trench, and the semiconductor layer; a conductive material, formed in the plurality of trenches and the connecting trench; a second insulating layer, covering part of a surface of the first insulating layer and part of a surface of the conductive material; and a metal layer, covering part of a surface of the second insulating layer.

主权项

1. A termination region structure of a semiconductor device, comprising:
a semiconductor layer; a plurality of trenches, formed on a surface of the semiconductor layer; a first connecting trench, formed on the surface of the semiconductor layer, for connecting a first trench and a second trench adjacent to each other in the plurality of trenches; a first insulating layer, formed on a surface of the plurality of trenches, a surface of the connecting trench, and the surface of the semiconductor layer where the plurality of trenches or the connecting trench is not formed; a conductive material, formed in the plurality of trenches and the first connecting trench whose surfaces have the first insulating layer, wherein the conductive material in the first trench and the conductive material in the second trench are connected through the conductive material in the first connecting trench; a second insulating layer, at least covering part of a surface of the first insulating layer not contacting the conductive material and part of a surface of the conductive material not contacting the first insulating layer; and a metal layer, at least covering part of a surface of the second insulating layer.