发明名称 |
POWER DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Provided are a power device having an improved field stop layer and a method of manufacturing the same. The power device includes: a first field stop layer formed of a semiconductor substrate and of a first conductive type; a second field stop layer formed on the first field stop layer and of the first conductive type, the second field stop layer having a region with an impurity concentration higher than the first field stop layer; a drift region formed on the second field stop layer and of the first conductive type, the drift region having an impurity concentration lower than the first field stop layer; a plurality of power device cells formed on the drift region; and a collector region formed below the first field stop layer, wherein the second field stop layer includes a first region having a first impurity concentration and a second region having a second impurity concentration higher than the first impurity concentration. |
申请公布号 |
US2014312382(A1) |
申请公布日期 |
2014.10.23 |
申请号 |
US201414316248 |
申请日期 |
2014.06.26 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD. |
发明人 |
LEE Kyu-hyun;KIM Young-chul;PARK Kyeong-seok;LEE Bong-yong;CHOI Young-chul |
分类号 |
H01L29/739;H01L21/266;H01L29/66 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
1. A power device comprising:
a first field stop layer of a first conductive type; a second field stop layer formed on the first field stop layer and of the first conductive type, the second field stop layer having a region with an impurity concentration higher than the first field stop layer; a drift region formed on the second field stop layer and of the first conductive type, the drift region having an impurity concentration lower than the first field stop layer; a plurality of power device cells formed on the drift region; and a collector region formed below the first field stop layer, wherein the second field stop layer including a first region having a first impurity concentration and a second region having a second impurity concentration higher than the first impurity concentration. |
地址 |
Bucheon-si KR |