发明名称 |
STORAGE DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
A low-power storage device is provided. The storage device includes a first transistor, a second transistor, a logic element, and a semiconductor element. The second transistor controls supply of a first signal to a gate of the first transistor. When the potential of a second signal to be input is changed from a first potential into a second potential lower than the first potential, the logic element changes the potential of a first terminal of the first transistor from a third potential lower than the second potential into the first potential after the logic element changes the potential of the first terminal of the first transistor from the second potential into the third potential. The semiconductor element has a function of making a second terminal of the first transistor floating. The first transistor includes a channel formation region in an oxide semiconductor film. |
申请公布号 |
WO2014171500(A1) |
申请公布日期 |
2014.10.23 |
申请号 |
WO2014JP60887 |
申请日期 |
2014.04.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
IKEDA, TAKAYUKI |
分类号 |
G11C11/405;G11C11/4074;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/08;H01L27/088;H01L27/092;H01L27/10;H01L27/105;H01L27/108;H01L29/786 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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