| 摘要 |
An ion implanter that introduces a process gas into an ion source, extracts a ribbon-shaped ion beam from the ion source using an extraction electrode system made up of multiple electrodes, and uses the ion beam to irradiate a substrate disposed in a processing chamber during ion implantation processing, and that also introduces a cleaning gas into the ion source and performs cleaning inside said ion source at times other than during ion implantation processing, wherein during the re-initiation of the ion beam upon termination of cleaning, a predetermined voltage is applied to the extraction electrode system and the operating parameters of the ion source are then set to values corresponding to the implantation recipe of the substrate to be processed. |
