发明名称 |
METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING MAGNETIC TUNNEL JUNCTION AND RELATED DEVICE |
摘要 |
<p>A method for forming a semiconductor device includes: forming a perpendicular magnetized magnetic device on a substrate, annealing the perpendicular magnetized magnetic device to crystallize the same, and applying a perpendicular magnetic field to the perpendicular magnetized magnetic device. Applying the perpendicular magnetic field is performed while annealing the perpendicular magnetized magnetic device or is sequentially performed after annealing the perpendicular magnetized magnetic device. The perpendicular magnetic field may be applied in a direction perpendicular to the interface of the perpendicular magnetized magnetic device.</p> |
申请公布号 |
KR20140123340(A) |
申请公布日期 |
2014.10.22 |
申请号 |
KR20130040584 |
申请日期 |
2013.04.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, WOO JIN;KIM, KI WOONG;KIM, YOUNG HYUN |
分类号 |
G11C11/15;H01L21/8247;H01L27/115 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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