发明名称 |
Stressed channel fet with source/drain buffers |
摘要 |
A method for forming a stressed channel field effect transistor (FET) with source/drain buffers includes etching cavities in a substrate on either side of a gate stack located on the substrate; depositing source/drain buffer material in the cavities; etching the source/drain buffer material to form vertical source/drain buffers adjacent to a channel region of the FET; and depositing source/drain stressor material in the cavities adjacent to and over the vertical source/drain buffers. |
申请公布号 |
GB2500848(B) |
申请公布日期 |
2014.10.22 |
申请号 |
GB20130012793 |
申请日期 |
2012.01.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JEFFREY B JOHNSON;RAMACHANDRAN MURALIDHAR;PHILLIP J OLDIGES;VIOREL C ONTALUS;KAI XIU |
分类号 |
H01L21/8238;H01L21/8234;H01L27/12 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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