| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor photodetector capable of reducing element resistance. <P>SOLUTION: The semiconductor photodetector includes: an n-type substrate 10; an n-type first semiconductor layer 11 laminated on the substrate 10; a p-type second semiconductor layer 13 laminated on a non-doped light absorption layer 12 laminated on the first semiconductor layer 11 and containing Al; and a cap layer 14 laminated on the second semiconductor layer 13. By etching a part of the cap layer 14 so as to expose the second semiconductor layer 13 and oxidizing a part of the second semiconductor layer 13 from the exposed surface of the second semiconductor layer 13 to a boundary surface on the side of the substrate 10, a p-type semiconductor region 13a surrounded by an oxidation region 15 containing an Al oxide is formed. Thus, by forming a light receiving part without exposing a pi junction surface, the generation of crystal defects due to etching on the pi junction surface is suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
