| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce manufacturing cost of a liquid crystal display device. <P>SOLUTION: In a liquid crystal display device including a field effect thin film transistor: a transparent amorphous oxide semiconductor including indium as a material is used for a semiconductor layer of the thin film transistor; the semiconductor layer is formed into a shape including a source electrode, a drain electrode, and a region necessary for electrode lines of the source and drain electrodes; a metal thin film including indium is used for a source/drain layer stacked on the semiconductor layer; an insulating film made of silicon nitride is used for an insulating layer stacked on the source/drain layer; and a channel portion of the thin film transistor is formed by an opening provided in the insulating layer and the source/drain layer. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
