摘要 |
In a defatting step, the amount of oxygen to be mixed under an atmosphere is so adjusted that the amount of silicon carbide particles which are produced by the reaction between an organic component and silicon particles, both which are contained after the defatting, in a sintering step that is performed subsequent to the defatting step becomes 5 to 22 wt%. In the sintering step, post-reaction sintering is performed. |