发明名称 窒化ケイ素系多孔体、窒化ケイ素系多孔体の製造方法、ハニカム構造体およびハニカムフィルタ
摘要 In a defatting step, the amount of oxygen to be mixed under an atmosphere is so adjusted that the amount of silicon carbide particles which are produced by the reaction between an organic component and silicon particles, both which are contained after the defatting, in a sintering step that is performed subsequent to the defatting step becomes 5 to 22 wt%. In the sintering step, post-reaction sintering is performed.
申请公布号 JP5612149(B2) 申请公布日期 2014.10.22
申请号 JP20130070491 申请日期 2013.03.28
申请人 株式会社クボタ 发明人 山口 宏;岡野 宏昭;片山 理沙
分类号 C04B38/00;B01D39/20;C04B35/584;C04B38/06 主分类号 C04B38/00
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