| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a GaAs hall element having a small variation of offset voltage. <P>SOLUTION: A magnetism sensing section 22 consisting of n-GaAs layer is placed in between a first and a second insulating layer 23a, 23b consisting of AlGaAs which has greater band gap than the n-GaAs layer 22, and the carrier concentration of the n-GaAs layer 22 is kept at not less than 5×10<SP>16</SP>/cm<SP>3</SP>and not more than 1×10<SP>18</SP>/cm<SP>3</SP>. The movement of electrons from the lower part of the n-GaAs layer 22 to the side surface, and the effect of electron trap on the side surface are then controlled. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
