| 摘要 |
An embodiment of a compound semiconductor device includes: a substrate (11); a compound semiconductor stacked structure (12) of nitride over the substrate; a passivation film (17) that covers the compound semiconductor stacked structure; a gate electrode (13), a source electrode (14s), and a drain electrode (14d) at a level above the compound semiconductor stacked structure; and an Si-C bond containing film (116) that contains an Si-C bond and includes a part between the source electrode and the drain electrode. The part contacts at least a part of an upper surface of the compound semiconductor stacked structure or at least a part of an upper surface of the passivation film. |
