| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an organic thin film semiconductor device capable of simplifying a manufacturing process, while simultaneously realizing high mobility, low contact resistance, low threshold voltage and low sub-threshold value, and a method for manufacturing the same. <P>SOLUTION: The organic thin film semiconductor device is a bottom contact type, an electrode end having a tapered slope which is widened from the organic semiconductor side to an insulating layer side, is formed adjacent to at least the insulating layer among sides of the electrode, the rising angle represented by the inclination of slope with respect to a layer direction of the insulating layer of the electrode end, is less than or equal to allowable growth angleθ<SB POS="POST">max</SB>°of the organic molecule forming the organic semiconductor layer defined by the following formula (1):θ<SB POS="POST">max</SB>=tan<SP POS="POST">-1</SP>(e/d) (the formula (1)), d represents a thickness of a crystal grain of the organic molecule, e represents a thickness of single layer of the organic molecule. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
