| 摘要 |
To obtain a photovoltaic device having a structure to use reflection light at a back surface side of the photovoltaic device. The photovoltaic device includes a p-type silicon substrate 12, an n-type diffusion layer 13 having an n-type impurity diffused at a light incident-surface side of the p-type silicon substrate 12, front surface electrodes formed on the n-type diffusion layer 13, a p+ layer 14 formed on a back surface opposite to the light incident-surface side of the p-type silicon substrate 12, back-surface silver electrodes 18 formed at predetermined positions of the p+ layer 14, and a reflection layer 20 made of an insulating material that reflects light formed on the p+ layer 14 on which back-surface silver electrodes 18 are formed. |
