CVD BASED METAL/SEMICONDUCTOR OHMIC CONTACT FOR HIGH VOLUME MANUFACTURING APPLICATIONS

摘要

Provided are an apparatus and a method for manufacturing an interconnection structure which provides an ohmic contact in a semiconductor element. The method comprises a step of providing a substrate, a gate dielectric, and a semiconductor element such as a transistor including a gate electrode, a source region, and a drain region on the substrate. An ultra-thin interface dielectric is deposited on the source region and the drain region through a CVD and has a thickness of about 3 to 20Å. The ultra-thin interface dielectric is configured to unpin a metal Fermi level from the source region and the drain region. Other processes such as metal deposition through the CVD and substrate surface cleaning can be performed in an integrated process tool without a vacuum break. The method comprises a step of forming at least one via on the source region and the drain region of the substrate through a pre-metal dielectric.