| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulating film which has a low dielectric constant and does not easily cause a problem of insulation failure at the time of application to the manufacture of a semiconductor device. <P>SOLUTION: The insulating film is formed by using a composition including a polymerizable compound having a partial structure comprising a cage structure of the adamantane type and a polymerizable reactive group that contributes to polymerization reaction and/or a polymer in which the polymerizable compound is partially polymerized, in the molecule. The etching rate at the time of etching with fluorine-based gas is 0.75 times or less than that of an SiO film. The polymerizable reactive group has an aromatic ring and an ethynyl group or a vinyl group directly bonded to the aromatic ring. In the polymerizable compound, preferably the number of carbon atoms derived from the aromatic ring is 15-38% relative to the number of carbon atoms of the entire polymerizable compound. <P>COPYRIGHT: (C)2011,JPO&INPIT |
