| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor element including a conductive support which reduces the influence of an internal electric field caused by a temperature gradient on a current without making a manufacturing process complicated to attain high efficiency, and to provide an optical semiconductor device mounted with the same. <P>SOLUTION: The optical semiconductor device includes a semiconductor film including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer provided between the n-type semiconductor layer and p-type semiconductor layer, the conductive support provided to the side of the p-type semiconductor layer of the semiconductor film and using electrons as a carrier, and a base electrically and thermally connected to the semiconductor film via the conductive support. The conductive support is stored in a recess provided on the base, and bonded to the bases with a conductive bonding material charged between the bottom surface and the side face of the recess and the bottom surface and the side face of the conductive support. The optical semiconductor device includes a thermally conductive high-resistance portion which limits inflow of a current from the side face of the conductive support while allowing thermal diffusion from the side face of the conductive support to the base, and an electrically conductive portion which allows inflow of a current from the bottom surface of the support. <P>COPYRIGHT: (C)2011,JPO&INPIT |
