| 摘要 |
A current switching device (8) comprises an integrated gate-commutated thyristor (10) with an anode (14), a cathode (16), and a gate (18), wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage (40) to the gate; and a gate unit (12) for generating the switch-off voltage (40). The gate unit (12) and a connection of the gate unit to the gate (18) establish a gate circuit (38) having a stray impedance. The gate unit (12) is adapted for generating a spiked switch-off voltage (40) with a maximum (44) above a breakdown voltage ( VGR MAX ) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage ( VGR MAX ) due to the stray impedance of the gate circuit (38). |
