| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a light receiving element with good quantum efficiency (electron extraction efficiency) by using a nitride semiconductor. <P>SOLUTION: A light receiving element has an n-type layer, an active layer, and a p-type layer each comprising a nitride semiconductor in order. Between the n-type layer and the active layer, there are included a first layer with an n-type impurity concentration lower than the n-type impurity concentration of the n-type layer and a second layer with a lattice constant larger than the lattice constant of the first layer in order from the n-type layer. <P>COPYRIGHT: (C)2011,JPO&INPIT |
