发明名称 |
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
<p>A method for producing a semiconductor device includes an implantation step of performing proton implantation from a rear surface of a semiconductor substrate (101) of a first conductivity type and a formation step of performing an annealing process for the semiconductor substrate (101) in an annealing furnace to form a first semiconductor region of the first conductivity type which has a higher impurity concentration than the semiconductor substrate (101) after the implantation step. In the formation step, the furnace is in a hydrogen atmosphere and the volume concentration of hydrogen is in the range of 6% to 30%. Therefore, it is possible to reduce crystal defects in the generation of donors by proton implantation. In addition, it is possible to improve the rate of change into a donor.</p> |
申请公布号 |
EP2793251(A1) |
申请公布日期 |
2014.10.22 |
申请号 |
EP20130764611 |
申请日期 |
2013.03.18 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
KOBAYASHI, YUSUKE;YOSHIMURA, TAKASHI |
分类号 |
H01L21/265;H01L21/329;H01L21/331;H01L29/739;H01L29/861 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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