NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

Disclosed is a nitride semiconductor light-emitting device capable of improving a light scattering feature by forming a current blocking pattern with a material having a refractive index 2.0 or greater, thereby maximizing light extraction efficiency. The nitride semiconductor light-emitting device according to the present invention comprises an n-type nitride layer; an active layer formed on the n-type nitride layer; a p-type nitride layer formed on the active layer; a current blocking pattern disposed on the p-type nitride layer and formed with a material having a refractive index 2.0 or greater; a transparent conductive pattern formed to cover the p-type nitride layer and the top of the current blocking pattern; a p-electrode pad formed on the transparent conductive pattern and disposed at a position corresponding to the current blocking pattern; and an n-electrode pad formed on an exposed area of the n-type nitride layer.