发明名称 |
UBM formation for integrated circuits |
摘要 |
A method includes forming a polymer layer over a metal pad, forming an opening in the polymer layer to expose a portion of the metal pad, and forming an under-bump-metallurgy (UBM). The UBM includes a portion extending into the opening to electrically couple to the metal pad. |
申请公布号 |
US8865586(B2) |
申请公布日期 |
2014.10.21 |
申请号 |
US201213344446 |
申请日期 |
2012.01.05 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wu Yi-Wen;Lim Zheng-Yi;Ho Ming-Che;Liu Chung-Shi |
分类号 |
H01L21/44;H01L21/4763;H01L23/48;H01L23/52;H01L23/495;H01L23/485;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method comprising:
forming a post passivation interconnect (PPI) comprising a PPI pad over a dielectric layer; forming a polymer layer over the PPI pad; forming an opening in the polymer layer to expose a portion of the PPI pad, wherein a top surface of the PPI pad, an edge of the PPI pad, and a top surface of the dielectric layer are exposed through the opening in the polymer layer; forming an under-bump-metallurgy (UBM) using chemical plating, wherein the UBM comprises a first portion extending into the opening to contact the top surface and the edge of the PPI pad, and a second portion over and contacting the top surface of the polymer layer; forming a metal conductive layer over the UBM; and performing a thermal step after the forming the metal conductive layer. |
地址 |
Hsin-Chu TW |