发明名称 UBM formation for integrated circuits
摘要 A method includes forming a polymer layer over a metal pad, forming an opening in the polymer layer to expose a portion of the metal pad, and forming an under-bump-metallurgy (UBM). The UBM includes a portion extending into the opening to electrically couple to the metal pad.
申请公布号 US8865586(B2) 申请公布日期 2014.10.21
申请号 US201213344446 申请日期 2012.01.05
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Wu Yi-Wen;Lim Zheng-Yi;Ho Ming-Che;Liu Chung-Shi
分类号 H01L21/44;H01L21/4763;H01L23/48;H01L23/52;H01L23/495;H01L23/485;H01L21/768 主分类号 H01L21/44
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method comprising: forming a post passivation interconnect (PPI) comprising a PPI pad over a dielectric layer; forming a polymer layer over the PPI pad; forming an opening in the polymer layer to expose a portion of the PPI pad, wherein a top surface of the PPI pad, an edge of the PPI pad, and a top surface of the dielectric layer are exposed through the opening in the polymer layer; forming an under-bump-metallurgy (UBM) using chemical plating, wherein the UBM comprises a first portion extending into the opening to contact the top surface and the edge of the PPI pad, and a second portion over and contacting the top surface of the polymer layer; forming a metal conductive layer over the UBM; and performing a thermal step after the forming the metal conductive layer.
地址 Hsin-Chu TW