LED having a low defect N-type layer that has grown on a silicon substrate

摘要

A vertical GaN-based blue LED has an n-type GaN layer that was grown directly on Low Resistance Layer (LRL) that in turn was grown over a silicon substrate. In one example, the LRL is a low sheet resistance GaN/AlGaN superlattice having periods that are less than 300 nm thick. Growing the n-type GaN layer on the superlattice reduces lattice defect density in the n-type layer. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form finished LED devices. In some examples, some or all of the LRL remains in the completed LED device such that the LRL also serves a current spreading function. In other examples, the LRL is entirely removed so that no portion of the LRL is present in the completed LED device.

主权项

1. A method of manufacturing a Light Emitting Diode (LED) device, comprising:
(a) forming a buffer layer on a silicon substrate, and then forming a template layer on the buffer layer; (b) forming a superlattice structure directly on the template layer, wherein the superlattice structure includes a plurality of periods, and wherein each period of the superlattice structure includes an aluminum-gallium-nitride sublayer and a gallium-nitride sublayer; (c) forming an n-type layer over and directly on the superlattice structure; (d) forming an active layer over the n-type layer, wherein the active layer includes an amount of indium; (e) forming a p-type layer over the active layer such that the silicon substrate, the buffer layer, the template layer, the superlattice structure, the n-type layer, the active layer, and the p-type layer form a first structure; (f) bonding a conductive carrier to the first structure thereby forming a second structure; (g) removing the silicon substrate from the second structure thereby forming a third structure.