发明名称 Method for making three-dimensional nano-structure array
摘要 A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.
申请公布号 US8865007(B2) 申请公布日期 2014.10.21
申请号 US201113340221 申请日期 2011.12.29
申请人 Tsinghua University;Hon Hai Precision Industry Co., Ltd. 发明人 Zhu Zhen-Dong;Li Qun-Qing;Zhang Li-Hui;Chen Mo;Jin Yuan-Hao;Fan Shou-Shan
分类号 B29C59/14;B82Y40/00;B81C1/00 主分类号 B29C59/14
代理机构 Novak Druce Connolly Bove + Quigg LLP 代理人 Novak Druce Connolly Bove + Quigg LLP
主权项 1. A method for making a three-dimensional nano-structure array, comprising: providing a base; locating a mask layer on the base; patterning the mask layer to form a plurality of bar-shaped protruding structures on a surface of the base, wherein a slot is defined between each of two adjacent protruding structures of the plurality of protruding structures to expose a portion of the base; etching exposed portion of the base through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair, wherein the each of two adjacent protruding structures gradually slant and tops of the each of two adjacent protruding structures gradually approach each other, a first part of the base corresponding to each of the protruding pairs is etched at a first speed, and a second part of the base exposed from each of two adjacent protruding pairs are etched at a second speed, and the first speed is smaller than the second speed, and a plurality of first grooves and a plurality of second grooves are alternately arranged on the base, and a first depth of the first groove is different from a second depth of the second groove; and removing the mask layer.
地址 Beijing CN