| 发明名称 | Low micropipe 100 mm silicon carbide wafer | ||
| 摘要 | A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2. | ||
| 申请公布号 | US8866159(B1) | 申请公布日期 | 2014.10.21 |
| 申请号 | US201314087215 | 申请日期 | 2013.11.22 |
| 申请人 | Cree, Inc. | 发明人 | Powell Adrian;Brady Mark;Leonard Robert Tyler |
| 分类号 | H01L29/24;H01L29/16;H01L29/04 | 主分类号 | H01L29/24 |
| 代理机构 | Moore & Van Allen PLLC | 代理人 | Phillips Steven B.;Moore & Van Allen PLLC |
| 主权项 | 1. A high quality single crystal wafer of SiC having a diameter of from about 100 mm to about 127 mm and a micropipe density less than about 25 cm−2. | ||
| 地址 | Durham NC US | ||