| 发明名称 |
Deposition and selective removal of conducting helplayer for nanostructure processing |
| 摘要 |
A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer. |
| 申请公布号 |
US8866307(B2) |
申请公布日期 |
2014.10.21 |
| 申请号 |
US201313961532 |
申请日期 |
2013.08.07 |
| 申请人 |
|
发明人 |
Berg Jonas S. T.;Desmaris Vincent;Kabir Mohammad Shafiqul;Saleem Muhammad Amin;Brud David |
| 分类号 |
H01L23/48;H01L21/768;B82Y10/00;B82Y40/00;H01L29/06;H01L29/66;H01L23/498;H01L21/02 |
主分类号 |
H01L23/48 |
| 代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
| 主权项 |
1. A nanostructure device comprising:
a substrate having an upper surface; an insulator layer arranged on the upper surface of said substrate, said insulator layer having at least one through-going hole formed therein; a catalyst layer arranged on the substrate and at least partly covered by the insulator layer; and at least one nanostructure grown from the catalyst layer through said at least one hole. |
| 地址 |
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