发明名称 Three-dimensional integrated circuits and fabrication thereof
摘要 A three-dimensional integrated circuit is disclosed, including a first interposer including through substrate vias (TSV) therein and circuits thereon; a plurality of first active dies disposed on a first side of the first interposer, a plurality of first intermediate interposers, each including through substrate vias (TSV), disposed on the first side of the first interposer, and a second interposer including through substrate vias (TSV) therein and circuits thereon supported by the first intermediate interposers.
申请公布号 US8866281(B2) 申请公布日期 2014.10.21
申请号 US201213553725 申请日期 2012.07.19
申请人 Nanya Technology Corporation 发明人 Huang Tsai-Yu
分类号 H01L23/02 主分类号 H01L23/02
代理机构 代理人
主权项 1. A three-dimensional integrated circuit, comprising: a first interposer comprising through substrate vias (TSV) therein and circuits on a first side of the first interposer; a plurality of first active dies arranged on the first side of the first interposer along a direction parallel to the first side; a plurality of first intermediate interposers, each comprising through substrate vias (TSV), disposed on the first side of the first interposer, wherein each of the plurality of first intermediate interposers is disposed between adjacent first active dies; solder bumps disposed on a second surface of the first interposer opposite to the first side of the first interposer, wherein one of the solder bumps, one of the through substrate vias in the first interposer and one of the through substrate vias in one of the plurality of first intermediate interposers are aligned with each other; and a second interposer comprising through substrate vias (TSV) therein and circuits thereon supported by the first intermediate interposers.
地址 Taoyuan TW