| 发明名称 |
Semiconductor chip device with polymeric filler trench |
| 摘要 |
A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench. |
| 申请公布号 |
US8866276(B2) |
申请公布日期 |
2014.10.21 |
| 申请号 |
US201314132557 |
申请日期 |
2013.12.18 |
| 申请人 |
Advanced Micro Devices, Inc.;ATI Technologies ULC |
发明人 |
Su Michael Z.;Refai-Ahmed Gamal;Black Bryan |
| 分类号 |
H01L21/00;H01L21/56;H01L23/498;H01L25/065;H01L23/367;H01L23/31;H01L23/29;H01L23/24;H01L23/00;H01L23/495;H01L23/14 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
Honeycutt Timothy M. |
| 主权项 |
1. An apparatus, comprising:
a first semiconductor chip; an insulating layer on the first semiconductor chip, the insulating layer including a trench, the trench having a width and a length, the width being smaller than the length, the trench defined by opposing sidewalls of the insulating layer; a second semiconductor chip stacked on the first semiconductor chip to leave a gap between the second semiconductor chip and the insulating layer; and a polymeric filler positioned in the gap wherein a portion of the polymeric filler is in the trench. |
| 地址 |
Sunnyvale CA US |
