Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device

摘要

A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.

主权项

1. A method of forming a phase change material layer pattern, comprising:
forming a phase change material layer on an insulating interlayer having an opening therein, in a process by which phase change material is formed in part of the opening, and wherein a native oxide is produced at a surface of the phase change material layer; removing the native oxide by performing a plasma treatment process on the phase change material layer; and performing a heat treatment process that comprises heating the phase change material layer, with the oxide having been removed from the surface thereof, to remove any void or a seam in the phase change material layer, such that the phase change material layer fills the opening more completely.