Methods of fabricating a semiconductor device including fine patterns

摘要

Methods of fabricating a semiconductor device are provided. The method includes forming active lines in a semiconductor substrate, forming contact lines generally crossing over the active lines, forming line-shaped etch mask patterns generally crossing over the active lines and the contact lines, etching the contact lines exposed by the line-shaped etch mask patterns to form contact separation grooves and to form contact patterns generally remaining at intersections between the line-shaped etch mask patterns and the active lines, etching the active lines exposed by the contact separation grooves to form active separation grooves that generally divide each of the active lines into a plurality of active patterns, forming gates that substantially intersect the active patterns, and forming bit lines electrically connected to the contact patterns.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a first isolation layer in a semiconductor substrate to define active lines; forming contact lines generally crossing over the active lines and a first interlayer insulation layer substantially filling spaces between the contact lines; forming line-shaped etch mask patterns generally crossing over the active lines and the contact lines; etching the contact lines exposed by the line-shaped etch mask patterns to form contact separation grooves and to form contact patterns generally remaining at intersections between the line-shaped etch mask patterns and the active lines; etching the active lines exposed by the contact separation grooves to form active separation grooves that generally divide each of the active lines into a plurality of active patterns; forming a third isolation layer substantially filling the active separation grooves; forming gates that substantially intersect the active patterns; and forming bit lines generally crossing over the gates.