发明名称 3D semiconductor package interposer with die cavity
摘要 A 3D semiconductor package using an interposer is provided. In an embodiment, an interposer is provided having a first die electrically coupled to a first side of the interposer and a second die electrically coupled to a second side of the interposer. The interposer is electrically coupled to an underlying substrate, such as a packaging substrate, a high-density interconnect, a printed circuit board, or the like. The substrate has a cavity such that the second die is positioned within the cavity. The use of a cavity may allow smaller conductive bumps to be used, thereby allowing a higher number of conductive bumps to be used. A heat sink may be placed within the cavity to aid in the dissipation of the heat from the second die.
申请公布号 US8865521(B2) 申请公布日期 2014.10.21
申请号 US201313899815 申请日期 2013.05.22
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Jeng Shin-Puu;Chen Kim Hong;Hou Shang-Yun;Shih Chao-Wen;Hsieh Cheng-Chieh;Yu Chen-Hua
分类号 H01L21/00;H01L21/30;H01L25/00;H01L23/498;H01L23/13;H01L23/00;H01L23/367;H01L23/42 主分类号 H01L21/00
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of forming a semiconductor device, the method comprising: attaching one or more first dies to a first side of an interposer using conductive bumps, wherein the conductive bumps are attached to bond pads on a first side of the interposer; attaching one or more second dies to a second side of the interposer using conductive bumps, wherein the conductive bumps are attached to bond pads on a second side of the interposer; attaching the interposer to a first side of a substrate after the attaching the one or more first dies and the one or more second dies to the interposer, such that at least one of the one or more second dies is positioned within a cavity in the substrate; and forming a plurality of connectors on the second side of the substrate opposite the first side of the substrate, at least a portion of the plurality of connectors aligned under the cavity.
地址 Hsin-Chu TW