发明名称 Memory devices, testing systems and methods
摘要 Testing systems and methods, as well as memory devices using such testing systems and methods, may facilitate testing of memory devices using a read-modify-write test procedure. One such testing system receives a signal indicative of at least some of a plurality of bits of data read from an address differing from each other, and then masks subsequent write operations at the same address. Therefore, any address at which the bits of read data do not all have the same value may be considered to be faulty. Failure data from the test can therefore be stored in the same array of memory cells that is being tested.
申请公布号 US8868991(B2) 申请公布日期 2014.10.21
申请号 US201313867790 申请日期 2013.04.22
申请人 Micron Technology, Inc 发明人 Shore Michael A.
分类号 G11C29/00;G11C29/44;G11C29/38 主分类号 G11C29/00
代理机构 Dorsey & Whitney LLP 代理人 Dorsey & Whitney LLP
主权项 1. An apparatus comprising: error detect circuitry configured to provide an error signal having a value indicating an error responsive to detecting a read data error associated with a memory cell of an array of memory cells; a write mask circuit configured to provide a write mask signal responsive to receiving the error signal having the value indicating the error; and the array of memory cells, wherein the array is configured to store the read data error in the memory cell of the array with which the read data error is associated with.
地址 Boise ID US