发明名称 |
Preparation method for reduced graphene oxide using sulfonyl hydrazide-based reducing agent and optoelectronic devices thereof |
摘要 |
A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film includes preparing graphene oxide; preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure. |
申请公布号 |
US8865515(B2) |
申请公布日期 |
2014.10.21 |
申请号 |
US201213356965 |
申请日期 |
2012.01.24 |
申请人 |
Korea Institute of Science and Technology |
发明人 |
Na Seok In;Kim Dong Yu;Koo Hye Young;Yun Jin Mun;Yeo Jun Seok;Kim Jun Kyung |
分类号 |
H01L51/40;B82Y10/00;C01B31/04;B82Y40/00;B82Y30/00;H01L51/00;H01L51/44;H01L51/52;H01L51/50 |
主分类号 |
H01L51/40 |
代理机构 |
Ladas & Parry LLP |
代理人 |
Ladas & Parry LLP |
主权项 |
1. A method for fabricating a graphene thin film, the method comprising:
(a) preparing graphene oxide; (b) preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; (c) preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and (d) fabricating a graphene thin film by applying the graphene dispersed solution. |
地址 |
Seoul KR |