发明名称 Preparation method for reduced graphene oxide using sulfonyl hydrazide-based reducing agent and optoelectronic devices thereof
摘要 A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film includes preparing graphene oxide; preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.
申请公布号 US8865515(B2) 申请公布日期 2014.10.21
申请号 US201213356965 申请日期 2012.01.24
申请人 Korea Institute of Science and Technology 发明人 Na Seok In;Kim Dong Yu;Koo Hye Young;Yun Jin Mun;Yeo Jun Seok;Kim Jun Kyung
分类号 H01L51/40;B82Y10/00;C01B31/04;B82Y40/00;B82Y30/00;H01L51/00;H01L51/44;H01L51/52;H01L51/50 主分类号 H01L51/40
代理机构 Ladas & Parry LLP 代理人 Ladas & Parry LLP
主权项 1. A method for fabricating a graphene thin film, the method comprising: (a) preparing graphene oxide; (b) preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; (c) preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and (d) fabricating a graphene thin film by applying the graphene dispersed solution.
地址 Seoul KR