Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors

摘要

The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.

主权项

1. A method, comprising:
depositing a chalcogenide film on a first electrode, wherein a portion of the chalcogenide film contacts the first electrode, wherein the first electrode includes titanium nitride; depositing a titanium film over the chalcogenide film; depositing a second electrode on the titanium film, wherein the second electrode includes titanium nitride; and altering, the composition of the chalcogenide film.